Cypress CY14B108L Manual, Specification Sheet

Manual, Specification Sheet for Cypress CY14B108L Computer Hardware (24 pages)

Specifications:

126/126181-cy14b108l.pdf file (14 Dec 2023)
  • Manufacturer: Cypress
  • Category of Device: Computer Hardware
  • Document: CY14B108L, File Type: PDF Specification Sheet
  • Updated: 14-12-2023
  • Count of Pages: 24
Download CY14B108L Manual (24 pages)

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Data: UPD 14th December 2023

Cypress CY14B108L Computer Hardware PDF Specification Sheet (Updated: Thursday 14th of December 2023 06:27:50 AM)

Rating: 4.1 (rated by 11 users)

Compatible devices: CY3273, CY8CKIT-031, CY8CKIT-001, CY14B101LA, CY14B101L, CY62167EV18, PCHD-DVI-SCALER, MB2100-01A-E.

Recommended Documentation:

Text Version of Cypress CY14B108L Computer Hardware Manual (Summary of Contents)

(Ocr-Read of Cypress CY14B108L Document (Main Content), UPD: 14 December 2023)
  • 7, PRELIMINARY CY14B108L, CY14B108N Document #: 001-45523 Rev. *B Page 7 of 24 Preventing AutoStore The AutoStore function is disabled by initiating an AutoStore disable sequence. A sequence of read operations is performed in a manner similar to the Software STORE initiation. To ini…

  • 15, PRELIMINARY CY14B108L, CY14B108N Document #: 001-45523 Rev. *B Page 15 of 24 Hardware STORE Cycle Parameters Description 20 ns 25 ns 45 ns Unit Min Max Min Max Min Max t DHSB HSB To Output Active Time when write latch not set 20 25 25 ns t PHSB Hardware STORE Pulse Width 15 15 …

  • 4, PRELIMINARY CY14B108L, CY14B108N Document #: 001-45523 Rev. *B Page 4 of 24 Device Operation The CY14B108L/CY14B108N nvSRAM is made up of two functional components paired in the same physical cell. They are a SRAM memory cell and a nonvolatile QuantumTrap cell. The SRAM memory cell opera…

  • 11, PRELIMINARY CY14B108L, CY14B108N Document #: 001-45523 Rev. *B Page 11 of 24 Figure 6. SRAM Read Cycle #2: CE and OE Controlled [3, 11, 15] Figure 7. SRAM Write Cycle #1: WE Controlled [3, 14, 15, 16] Address ValidAddress Data Output Output Data Valid Standby Active High Impedance CE OE B…

  • 12, PRELIMINARY CY14B108L, CY14B108N Document #: 001-45523 Rev. *B Page 12 of 24 Figure 8. SRAM Write Cycle #2: CE Controlled [3, 14, 15, 16] Figure 9. SRAM Write Cycle #3: BHE and BLE Controlled [3, 14, 15, 16] Data Output Data Input Input Data Valid High Impedance Address Valid Address t WC t …

  • 9, Cypress CY14B108L PRELIMINARY CY14B108L, CY14B108N Document #: 001-45523 Rev. *B Page 9 of 24 AC Test Conditions Input Pulse Levels ....................................................0V to 3V Input Rise and Fall Times (10% - 90%) ........................ < 3 ns Input and Output Timing Referenc…

DOC-fcbae8e1:

Recommended:
A110, U-4LE1E5, CEM250/55, PS212

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