Cypress Semiconductor CY62147DV30 Manual, Specification Sheet

3, CY62147DV30 Document #: 38-05340 Rev. *F Page 3 of 12 Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature .................................–65°C to +150°C Ambient Temperature with Power Applied.............................…

4, CY62147DV30 Document #: 38-05340 Rev. *F Page 4 of 12 Notes: 10. Tested initially and after any design or process changes that may affect these parameters. 11. Test condition for the 45-ns part is a load capacitance of 30 pF. 12. Full device operation requires linear V CC ramp…

7, Cypress Semiconductor CY62147DV30 CY62147DV30 Document #: 38-05340 Rev. *F Page 7 of 12 Write Cycle No. 1 (WE Controlled) [17, 21, 22] Write Cycle No. 2 (CE Controlled) [17, 21, 22] Notes: 21. Data I/O is high impedance if OE = V IH . 22. If CE goes HIGH simultaneously with WE = V IH , the output remains in a high…

2, CY62147DV30 Document #: 38-05340 Rev. *F Page 2 of 12 Notes: 2. NC pins are not internally connected on the die. 3. DNU pins have to be left floating or tied to V SS to ensure proper application. 4. Pins H1, G2, and H6 in the VFBGA package are address expansion pins for 8 Mb, 16 Mb, and 32 Mb,…

1, 4-Mbit (256K x 16) Static RAM CY62147DV30 Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Document #: 38-05340 Rev. *F Revised August 31, 2006 Features • Temperature Ranges — Industrial: –40°C to +85°C — Automotive-…

6, CY62147DV30 Document #: 38-05340 Rev. *F Page 6 of 12 Switching Waveforms Read Cycle 1 (Address Transition Controlled) [18, 19] Read Cycle No. 2 (OE Controlled) [19, 20] Notes: 18. The device is continuously selected. OE , CE = V IL , BHE and/or BLE = V IL . 19. WE is HIGH for read cycle. …