Cypress Semiconductor MoBL CY62157E Manual, Specification Sheet

8, CY62157E MoBL ® Document #: 38-05695 Rev. *C Page 8 of 12 Write Cycle 3 (WE Controlled, OE LOW) [20, 21] Write Cycle 4 (BHE/BLE Controlled, OE LOW) [20, 21] Switching Waveforms (continued) VALID DATA t HD t SD t LZWE t PWE t SA t HA t AW t SCE t WC t HZWE t BW See Note 21 CE 1 ADDRESS CE …

5, CY62157E MoBL ® Document #: 38-05695 Rev. *C Page 5 of 12 Switching Characteristics Over the Operating Range [12] Parameter Description 45 ns 55 ns UnitMin Max Min Max Read Cycle t RC Read Cycle Time 45 55 ns t AA Address to Data Valid 45 55 ns t OHA Data Hold from Address Change …

1, 8-Mbit (512K x 16) Static RAM CY62157E MoBL ® Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Document #: 38-05695 Rev. *C Revised November 21, 2006 Features • Very high speed: 45 ns • Wide voltage range: 4.5V–5.5V • Ultra-low standb…

3, Cypress Semiconductor MoBL CY62157E CY62157E MoBL ® Document #: 38-05695 Rev. *C Page 3 of 12 Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature ................................–65°C to + 150°C Ambient Temperature with Power Applied ......................…

2, CY62157E MoBL ® Document #: 38-05695 Rev. *C Page 2 of 12 Pin Configuration [2, 3] Product Portfolio Product Range V CC Range (V) Speed (ns) Power Dissipation Operating I CC , (mA) Standby, I SB2 (µA)f = 1MHz f = f max Min Typ [4] Max Typ [4] Max Typ [4] Max Typ [4] Max CY62157…