Cypress Semiconductor CY62158E Manual, Specification Sheet

6, CY62158E MoBL ® Document #: 38-05684 Rev. *D Page 6 of 10 Switching Waveforms Figure 4 shows address transition controlled read cycle waveforms. [13, 14] Figure 4. Read Cycle No. 1 Figure 5 shows OE controlled read cycle waveforms. [14, 15] Figure 5. Read Cycle No. 2 ADDRESS DATA OUT PR…

3, CY62158E MoBL ® Document #: 38-05684 Rev. *D Page 3 of 10 Maximum Ratings Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage Temperature.................................. –65°C to +150°C Ambient Temperature wit…

7, CY62158E MoBL ® Document #: 38-05684 Rev. *D Page 7 of 10 Figure 6 shows WE controlled write cycle waveforms. [12, 16, 17] Figure 6. Write Cycle No. 1 Figure 7 shows CE 1 or CE 2 controlled write cycle waveforms. [12, 16, 17] Figure 7. Write Cycle No. 2 Switching Waveforms (continued) t HD …

10, Document #: 38-05684 Rev. *D Revised June 16, 2008 Page 10 of 10 All products and company names mentioned in this document may be the trademarks of their respective holders. CY62158E MoBL ® © Cypress Semiconductor Corporation, 2008. The information contained herein is subject to change with…

1, CY62158E MoBL ® 8-Mbit (1M x 8) Static RAM Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Document #: 38-05684 Rev. *D Revised June 16, 2008 Features ■ Very high speed: 45 ns ❐ Wide voltage range: 4.5V – 5.5V ■ Ultra low acti…

4, Cypress Semiconductor CY62158E CY62158E MoBL ® Document #: 38-05684 Rev. *D Page 4 of 10 Figure 2. AC Test Loads and Waveforms Parameters 5.0V Unit R1 1838 Ω R2 994 Ω R TH 645 Ω V TH 1.75 V Data Retention Characteristics Over the Operating Range Parameter Description Conditions Min Typ [2] Max Unit V DR V CC for Da…